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NTB5412N, NTP5412N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V DS = 0 V, I D = 250 m A
60
54.6
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
T J = 25 ° C
T J = 150 ° C
1.0
100
m A
Gate ? Body Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
V GS = V DS , I D = 250 m A
2.0
3.3
4.0
V
Negative Threshold Temperature Coefficient
V GS(th) /T J
6.4
mV/ ° C
Drain ? to ? Source On Voltage
V DS(on)
V GS = 10 V, I D = 60 A
0.7
1.2
V
V GS = 10 V, I D = 30 A, 150 ° C
0.75
Static Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 30 A
V GS = 15 V, I D = 30 A
11.1
58
14
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
C iss
C oss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
2325
440
3220
pF
Transfer Capacitance
C rss
170
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
V GS = 0 V, V DS = 48 V,
I D = 60 A
66
2.8
85
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
13.4
31
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 60 A, R G = 2.5 W
14
115
41
89
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I S = 60 A
T J = 25 ° C
T J = 125 ° C
1.0
0.9
1.2
V dc
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
t rr
t a
t b
Q RR
I S = 60 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s
75
54
21
96
ns
nC
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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